Switch with a first switching element in the form of a bipolar t

Details Switch with a first switching element in the form of a bipolar t Switch with a first switching element in the form of a bipolar t

1995-04-07

1996-10-15

Nelms, David C.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327478, 327432, 327108, G05F 110, H03K 1760, H03B 100

Patent

active

055658105

ABSTRACT:
A switch is described with a bipolar transistor as first switching element having a high breakdown voltage when operated in the reverse direction. This can be accomplished by a second switching element provided in the switch, a switching transistor, e.g. an MOS transistor, through which the base and the collector of the bipolar transistor are joined together, is activated in the reverse mode of the switch, i.e. when the bipolar transistor is in inverse mode, in such a way that the second switching element becomes conductive. The collector-emitter breakdown voltage of the bipolar transistor, i.e. its maximum permissible collector-emitter voltage, is thus brought closer to its higher base-emitter breakdown voltage.

REFERENCES:
patent: 3955103 (1976-05-01), Russell et al.
patent: 4867101 (1990-10-01), Nakamura et al.
patent: 5134323 (1992-07-01), Congdon

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