Switch, semiconductor device, and manufacturing method thereof

Details Switch, semiconductor device, and manufacturing method thereof Switch, semiconductor device, and manufacturing method thereof

2006-06-22

2010-02-23

Enad, Elvin G (Department: 2832)

Electricity: magnetically operated switches, magnets, and electr

Electromagnetically actuated switches

Polarity-responsive

C200S181000

Reexamination Certificate

active

07667559

ABSTRACT:
It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contact2opposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.

REFERENCES:
patent: 3560807 (1971-02-01), Urfer et al.
patent: 6876482 (2005-04-01), DeReus
patent: 6972650 (2005-12-01), Ma
patent: 7064637 (2006-06-01), Tactic-Lucic et al.
patent: 7164334 (2007-01-01), Shirakawa
patent: 2003/0132433 (2003-07-01), Piner et al.
patent: 2004/0140872 (2004-07-01), Wong
patent: 2001-067964 (1999-08-01), None
Han-Sheng Lee et al., “Integrated Microrelays:Concept and Initial Results”, Journal of Microelecromechanical Systems., vol. 11, No. 2, Apr. 2002, pp. 147-153.

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