Switch mode power amplifier using MIS-HEMT with field plate...

Details Switch mode power amplifier using MIS-HEMT with field plate... Switch mode power amplifier using MIS-HEMT with field plate...

2005-07-21

2009-06-16

Wojciechowicz, Edward (Department: 2895)

Amplifiers

With semiconductor amplifying device

Including class d amplifier

C257S289000, C257S401000, C257S622000, C257S630000

Reexamination Certificate

active

07548112

ABSTRACT:
Disclosed are a switch mode power amplifier and a field effect transistor especially suitable for use in a switch mode power amplifier. The transistor is preferably a compound high electron mobility transistor (HEMT) having a source terminal and a drain terminal with a gate terminal therebetween and positioned on a dielectric material. A field plate extends from the gate terminal over at least two layers of dielectric material towards the drain. The dielectric layers preferably comprise silicon oxide and silicon nitride. A third layer of silicon oxide can be provided with the layer of silicon nitride being positioned between layers of silicon oxide. Etch selectivity is utilized in etching recesses for the gate terminal.

REFERENCES:
patent: 5187580 (1993-02-01), Porter et al.
patent: 5939941 (1999-08-01), Nair et al.
patent: 6724255 (2004-04-01), Kee et al.
patent: 7236053 (2007-06-01), Pribble et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2005/0051796 (2005-03-01), Parikh et al.
patent: 2005/0051800 (2005-03-01), Mishra et al.
patent: 2005/0245037 (2005-11-01), Shin
U.S. Appl. No. 10/958,970, filed Oct. 4, 2004.
U.S. Appl. No. 10/976,422, filed Oct. 29, 2004.
U.S. Appl. No. 10/958,945, filed Oct. 4, 2004.
U.S. Appl. No. 11/078,265, filed Mar. 11, 2005.
U.S. Appl. No. 11/132,619, filed May 18, 2005.
International Search Report and Written Opinion; PCT/US06/28370; Jan. 28, 2008.

Affiliated with

Also associated with

Rating

Switch mode power amplifier using MIS-HEMT with field plate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Switch mode power amplifier using MIS-HEMT with field plate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Switch mode power amplifier using MIS-HEMT with field plate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4075787