Switch interface circuit for power mosfet gate drive control

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307270, 307571, 307581, 307560, H03K 1704, H03K 17687

Patent

active

048535630

ABSTRACT:
A switch interface circuit provides control voltages to the gate of a power MOSFET while protecting the power MOSFET from breakdown caused by transient signals and over-voltage. In one embodiment, a large JFET acts as gate-source shunt and a small JFET serves as a current source to turn the power MOSFET off when the turn-on current is removed. The JFET gate-drain and gate-source breakdown provides a voltage limitation to protect the MOSFET from gate overvoltage. Alternatively, Zener diodes and MOS transistors are used in lieu of the JFET for shorting the power MOSFET gate to source during turn-off and limiting its gate to source voltage during turn-on.

REFERENCES:
patent: 4034307 (1977-07-01), Schade, Jr.
patent: 4216393 (1980-08-01), Gilberg et al.
patent: 4256978 (1981-03-01), Pinckaers
patent: 4303831 (1981-12-01), El Hamamsy
patent: 4492883 (1985-01-01), Janutka
patent: 4575642 (1986-03-01), Hochreutiner et al.

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