Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2006-08-11
2008-03-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S002000, C977S762000
Reexamination Certificate
active
07348591
ABSTRACT:
A switch element includes a substrate; a plurality of carbon nanotubes provided upright on the substrate; magnetic particles arranged at tip ends of the carbon nanotubes respectively; and a plurality of conductive layers formed between base ends of the carbon nanotubes and the substrate. A switching operation of the switching element is performed in such a manner that the carbon nanotubes or the magnetic particles are brought into contact with each other according to an electrical potential between the conductive layers, and the carbon nanotubes are separated from each other when an electrical current flows through the carbon nanotubes with the carbon nanotubes or the magnetic particles brought into contact with each other.
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Kinoshita Atsuhiro
Koga Junji
Motoi Yuichi
Nakano Yoshihiko
Suenaga Seiichi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Jackson Jerome
Kabushiki Kaisha Toshiba
Valentine Jami M
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