Switch circuit, semiconductor device, and method of...

Details Switch circuit, semiconductor device, and method of... Switch circuit, semiconductor device, and method of...

2006-03-29

2010-10-26

Shingleton, Michael B (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S020000, C257S024000, C257S294000

Reexamination Certificate

active

07821031

ABSTRACT:
A switch circuit includes: a first FET that is connected to one of an input terminal and an output terminal, and performs ON/OFF operation under the control of a gate electrode connected to a control terminal; and a second FET that is connected between the first FET and the other one of the input terminal and the output terminal, and performs ON/OFF operation under the control of a gate electrode connected to the control terminal. The first FET has a higher gate backward breakdown voltage than that of the second FET. Alternatively, the first FET has lower OFF capacitance than that of the second FET.

REFERENCES:
patent: 4727403 (1988-02-01), Hida et al.
patent: 5945693 (1999-08-01), Suzuki et al.
patent: 7208777 (2007-04-01), Inai et al.
patent: 8-139014 (1996-05-01), None

Affiliated with

Also associated with

Rating

Switch circuit, semiconductor device, and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Switch circuit, semiconductor device, and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Switch circuit, semiconductor device, and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4187908