Switch circuit device, and wireless circuit device and...

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override

Reexamination Certificate

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Details

C327S436000

Reexamination Certificate

active

07746152

ABSTRACT:
A switch circuit device with improved insertion loss characteristics and isolation characteristics is provided. The switch circuit of the present invention includes a plurality of n-ch MOSFETs whose gates are connected together and whose drains and sources are connected in series, a p-ch MOSFET whose gate is connected to the gates of the plurality of n-ch MOSFETs and whose drain is connected to the source and drain of at least one pair of adjacent n-ch MOSFETs, and a voltage changing circuit for applying a low voltage to the source of the p-ch MOSFET while a high-level control voltage is applied to the gate of the p-ch MOSFET, and a high voltage to the source of the p-ch MOSFET while a low-level control voltage is applied to the gate of the p-ch MOSFET.

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patent: 7268613 (2007-09-01), Cranford et al.
patent: 7486127 (2009-02-01), Cranford et al.
patent: 11-163647 (1999-06-01), None
patent: 2005-515657 (2005-05-01), None
Ishida et al., “Managing Leakage in Charge-Based Analog Circuits with Low-VthTransistors by Analog T-Switch (AT-Switch) and Super Cut-off CMOS”,IEEE JSAP Symposium on VLSI Circuits Digest and Technical Papers, pp. 122-125, Jun. 2005.
Kawaguchi et al., “A Super Cut-Off CMOS (SCCMOS) Scheme for 0.5-V Supply Voltage with Picoampere Stand-By Current”,IEEE Journal of Solid-State Circuits, vol. 35, No. 10, Oct. 2000.

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