Swap gate in an ion-implanted bubble memory

Details Swap gate in an ion-implanted bubble memory Swap gate in an ion-implanted bubble memory

1985-04-09

1988-05-31

Moffitt, James W.

Static information storage and retrieval

Magnetic bubbles

Guide structure

G11C 1908

Patent

active

047485906

ABSTRACT:
In a magnetic bubble memory having a first system of aligned ion-implanted patterns and a second system of aligned ion-implanted patterns, a swap gate having a transfer conductor for transferring a magnetic bubble from the second system to the first system, and an erase conductor for erasing the bubble to be replaced on the first system.

REFERENCES:
patent: 4394746 (1983-07-01), Hirko et al.
patent: 4494216 (1985-01-01), Suzuki et al.
Abstracts of Japan, vol. 6, No. 137 p. P-130 (1015), Jul. 24, 1982.

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