SVO/CFx parallel cell design within the same casing

Chemistry: electrical current producing apparatus – product – and – Process of cell operation – Activation of inactive cell

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C429S219000, C429S220000, C429S221000, C429S223000, C429S224000, C429S231300, C429S231500, C429S231700, C429S231950, C429S326000

Reexamination Certificate

active

06926991

ABSTRACT:
A new cathode design has a first cathode active material of a relatively low energy density but of a relatively high rate capability contacted to a first cathode current collector and a second cathode active material having a relatively high energy density but of a relatively low rate capability in contact with a second cathode current collector, is described. The first and second cathode current collectors are connected to a common terminal lead. The present cathode design is useful for powering an implantable medical device requiring a high rate discharge application.

REFERENCES:
patent: 5569553 (1996-10-01), Smesko et al.
patent: 5614331 (1997-03-01), Takeuchi et al.
patent: 5639577 (1997-06-01), Takeuchi et al.
patent: 5667910 (1997-09-01), Takeuchi et al.
patent: 5667916 (1997-09-01), Ebel et al.
patent: 5744258 (1998-04-01), Bai et al.
patent: 5935724 (1999-08-01), Spillman et al.
patent: 5935728 (1999-08-01), Spillman et al.
patent: 6165638 (2000-12-01), Spillman et al.
patent: 6171729 (2001-01-01), Gan et al.
patent: 6258473 (2001-07-01), Spillman et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

SVO/CFx parallel cell design within the same casing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SVO/CFx parallel cell design within the same casing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SVO/CFx parallel cell design within the same casing will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3441067

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.