Suspended single crystal silicon structures and method of making

Details Suspended single crystal silicon structures and method of making Suspended single crystal silicon structures and method of making

1994-10-11

1997-02-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257401, 257470, 257577, 257622, H01L 31058, H01L 2906

Patent

active

056001746

ABSTRACT:
Temperature-sensitive transducers and other circuitry are manufactured by an electrochemical post-processing etch on an integrated circuit fabricated using a conventional CMOS process. Tetramethyl ammonium hydroxide or another anisotropic etchant having similar characterisics is used to selectively etch exposed front-side regions of a p-type silicon substrate, leaving n-type wells suspended from oxide beams. Circuits in the n-wells are thermally and electrically insulated from the substrate.

REFERENCES:
patent: 3758830 (1973-09-01), Jackson
patent: 3881181 (1975-04-01), Khajezadeh
patent: 4478077 (1984-12-01), Bohrer et al.
patent: 5300915 (1994-04-01), Higashi et al.
patent: 5369280 (1994-11-01), Liddiard
patent: 5374123 (1994-12-01), Bu

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