Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-12-29
2010-11-02
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S276000, C257S621000, C257S728000
Reexamination Certificate
active
07825440
ABSTRACT:
A suspended-membrane/suspended-substrate monolithic microwave integrated circuit module and method of making same. The device contains a plurality of active devices, such as transistors, a plurality of transmission mediums connected to the active devices; and a substrate having a first portion supporting the active devices and the transmission mediums thereon, and further having a plurality of discrete second portions extending from the first portion. The method teaches how to manufacture the device.
REFERENCES:
patent: 4180422 (1979-12-01), Rosvold
patent: 5233219 (1993-08-01), Shimoji et al.
patent: 5737052 (1998-04-01), Kimura
Siegel, P., et al., “2.5-THz Monolithic Membrane-Diode Mixer,”IEEEE Transactions on Microwave Theory and Techniques, vol. 47, No. 5 (May 1999).
Weinreb, S., et al., “High-Gain 150-215-Ghz MMIC Amplifier with Integral Waveguide Transitions,”IEEE Microwave and Guided Wave Letters, vol. 9, No. 7 (Jul. 1999).
HRL Laboratories LLC
Ladas & Parry
Vu Hung
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