Suspended germanium photodetector for silicon waveguide

Details Suspended germanium photodetector for silicon waveguide Suspended germanium photodetector for silicon waveguide

2011-03-08

2011-03-08

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S184000, C257S458000, C257S616000, C257S656000, C257SE31012, C257SE31024, C257SE31061

Reexamination Certificate

active

07902620

ABSTRACT:
A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

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