Suspended gate single-electron device

Details Suspended gate single-electron device Suspended gate single-electron device

2005-01-18

2005-01-18

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S009000, C257S014000, C257S024000, C257S030000, C257S036000, C438S197000, C438S299000, C438S585000

Reexamination Certificate

active

06844566

ABSTRACT:
The present invention provides a single-electron transistor device (100). The device (100) comprises a source (105) and drain (100) located over a substrate (115) and a quantum island (120) situated between the source and drain (105, 110), to form tunnel junctions (125, 130) between the source and drain (105, 110). The device (100) further includes a movable electrode (135) located adjacent the quantum island (120) and a displaceable dielectric (140) located between the moveable electrode (135) and the quantum island (120). The present invention also includes a method of fabricating a single-electron device (200), and a transistor circuit (300) that include a single-electron device (310).

REFERENCES:
R.H. Klunder, “Circuit Design with Metallic Single-Electron Tunnel Junctions”, PhD Thesis Tu Del., ISBN 90-9016412-X, 2002.
H. Inokawa, A. Fujiwara and Y. Takahashi, “A Multiple-Valued Logic with Merged Single-Electron and MOS Transistors”: Technical Digest of the IEDM, 2001, pp. 147-150.
K Uchida, T. Tanamoto, R. Obba, S. Yasuda and S. Fujita; “Single-Electron Random No. Generator (RNG) for Highly Secure Ubiquitous Computing Applications”; Technical Digest of the IEDM, 2002, pp. 177-180.
S Mahapatra, A. Ionescu, K. Banerjee and M. Declercq; “Modelling and Analysis of Power Dissipation In Single Electron Logic”; Technical Digest of the IEDM, 2002, pp. 323-326.
W. Wang and W. Porod, “Single Electron Transistor Analytic I-V Model For Spice Simulations”; Superlattices and Microstructures, vol. 28, No. 5/6, 2000, pp. 345-349.
C. Wasshuber, “Computational Single-Electronics”; Springer Verlag., ISBN 321183558x, 2001.
Simon, A Single Electron Device and Circuit Simulator, http://www.lybrary.com/simon/.
Christoph Wasshuber, “Recent Advances and Future Prospects in Single-Electronics”; To be Presented at Design Automation Conferences, Anaheim, CA, Jun. 4, 2003.

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