Susceptor, vapor phase growth apparatus, epitaxial wafer...

Details Susceptor, vapor phase growth apparatus, epitaxial wafer... Susceptor, vapor phase growth apparatus, epitaxial wafer...

2007-09-18

2007-09-18

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S088000, C117S090000, C117S098000

Reexamination Certificate

active

10493144

ABSTRACT:
A susceptor (10) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket (11) is formed on an upper surface of the susceptor to arrange the semiconductor substrate (W) inside thereof. The pocket (11) has a two-stage structure having an upper stage pocket (11a) for supporting an outer peripheral edge portion of the semiconductor substrate (W) and a lower stage pocket (11b) formed on a lower stage of a center side from the upper stage pocket (11a). A hole (12) penetrated to a rear surface of the susceptor and opened in the vapor phase growth is formed in the lower stage pocket (11b).

REFERENCES:
patent: 6129047 (2000-10-01), Nakamura
patent: 6444027 (2002-09-01), Yang et al.
patent: 2001/0037761 (2001-11-01), Ries et al.
patent: A 62-73621 (1987-04-01), None
patent: A 4-78130 (1992-03-01), None
patent: U 5-33523 (1993-04-01), None
patent: A 8-8198 (1996-01-01), None
patent: WO 01/86034 (2001-11-01), None

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