Coating apparatus – Gas or vapor deposition – Work support
Patent
1989-09-01
1991-01-22
Silverman, Stanley
Coating apparatus
Gas or vapor deposition
Work support
118725, 118730, C23C 1600
Patent
active
049862154
ABSTRACT:
A susceptor for use in a vertical vapor-phase growth system designed to heat substrates by means of heat transferred and radiated from a susceptor heated to cause vapor-phase growth on the substrates. The susceptor has a large number of spot-faced portions for receiving substrates, respectively. Each spot-faced portion has a concentrical circular ridge to define a pair of inner and outer spaces at the inner and outer sides, respectively, of the ridge, each of the inner and outer spaces having a concave bottom having a circular radial section, so that a substrate is supported by the circular ridge. Thus, the substrate is uniformly heated by means of the RF induction heat from the susceptor, so that generation of a thermal stress exceeding the critical strength of the substrate is suppressed and substantially no slip occurs. Since silicon that is formed during a vapor-phase growth reaction is deposited on the bottom of the outer space, it is possible to prevent deposition of silicon on the periphery of the reverse side of the substrate.
REFERENCES:
patent: 3641974 (1972-02-01), Yamada et al.
Kren, J. G., "Technique to Deposit Thick Films Without Warping or Breaking Wafer," IBM Technical Disclosure Bulletin, vol. 7, No. 12 (May 1965) p. 1119.
Kii Takeshi
Yamada Takayuki
Breiner A. W.
Kyushu Electronic Metal Co., Ltd.
Osaka Titanium Co., Ltd.
Owens Terry J.
Silverman Stanley
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