Susceptor for vapor-phase growth system

Coating apparatus – Gas or vapor deposition – Work support

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118725, 118730, C23C 1600

Patent

active

049862154

ABSTRACT:
A susceptor for use in a vertical vapor-phase growth system designed to heat substrates by means of heat transferred and radiated from a susceptor heated to cause vapor-phase growth on the substrates. The susceptor has a large number of spot-faced portions for receiving substrates, respectively. Each spot-faced portion has a concentrical circular ridge to define a pair of inner and outer spaces at the inner and outer sides, respectively, of the ridge, each of the inner and outer spaces having a concave bottom having a circular radial section, so that a substrate is supported by the circular ridge. Thus, the substrate is uniformly heated by means of the RF induction heat from the susceptor, so that generation of a thermal stress exceeding the critical strength of the substrate is suppressed and substantially no slip occurs. Since silicon that is formed during a vapor-phase growth reaction is deposited on the bottom of the outer space, it is possible to prevent deposition of silicon on the periphery of the reverse side of the substrate.

REFERENCES:
patent: 3641974 (1972-02-01), Yamada et al.
Kren, J. G., "Technique to Deposit Thick Films Without Warping or Breaking Wafer," IBM Technical Disclosure Bulletin, vol. 7, No. 12 (May 1965) p. 1119.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Susceptor for vapor-phase growth system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Susceptor for vapor-phase growth system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Susceptor for vapor-phase growth system will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1548218

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.