Susceptor for vapor-phase growth apparatus

Details Susceptor for vapor-phase growth apparatus Susceptor for vapor-phase growth apparatus

1998-07-27

2000-10-10

Lund, Jeffrie R

Coating apparatus

Gas or vapor deposition

With treating means

118728, 118500, C23C 1600

Patent

active

061290475

ABSTRACT:
It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the wafer. By providing a through-hole 7 passing through to a rear side at the outer peripheral side of the wafer inside the wafer pocket 6, a down flow of a reacting source gas from the upper surface of the susceptor 5 is formed, so that the unwanted flow of the dopant species being exhausted at the rear surface onto the wafer surface can be avoided. As a result, a raise in the dopant concentration at the outer peripheral portion of the epitaxial layer 9 can be controlled.

REFERENCES:
patent: 3845738 (1974-11-01), Berkman et al.
patent: 4986215 (1991-01-01), Yamada et al.
patent: 4990374 (1991-02-01), Keeley et al.
patent: 5242501 (1993-09-01), McDiarmid
patent: 5685906 (1997-11-01), Dietze et al.
patent: 5685914 (1997-11-01), Hills et al.
patent: 5704985 (1998-01-01), Kordina et al.
patent: 6043460 (2000-03-01), Johnsgard et al.

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