Susceptor for MOCVD reactor

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S090000, C257S088000, C257S291000, C257S292000, C257S440000, C257S441000, C438S689000

Reexamination Certificate

active

07122844

ABSTRACT:
A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

REFERENCES:
patent: 5356476 (1994-10-01), Foster et al.
patent: 5370739 (1994-12-01), Foster et al.
patent: 5580388 (1996-12-01), Moore
patent: 5683518 (1997-11-01), Moore et al.
patent: 5688331 (1997-11-01), Aruga et al.
patent: 5702532 (1997-12-01), Wen et al.
patent: 5788777 (1998-08-01), Burk, Jr.
patent: 5817406 (1998-10-01), Cheung et al.
patent: 5858102 (1999-01-01), Tsai
patent: 6001183 (1999-12-01), Gurary et al.
patent: 6099650 (2000-08-01), Carbonaro et al.
patent: 6118100 (2000-09-01), Mailho et al.
patent: 6151447 (2000-11-01), Moore et al.
patent: 6184498 (2001-02-01), Kiyama
patent: 6217662 (2001-04-01), Kong et al.
patent: 6257881 (2001-07-01), Fiala et al.
patent: 6310327 (2001-10-01), Moore et al.
patent: 6325858 (2001-12-01), Wengert et al.
patent: 6423192 (2002-07-01), Wada et al.
patent: 2001/0004880 (2001-06-01), Cho et al.
patent: 2001/0009141 (2001-07-01), Kong et al.
patent: 2001/0027970 (2001-10-01), Li et al.
patent: 2002/0083899 (2002-07-01), Komeno et al.
patent: 2002/0127508 (2002-09-01), Jin et al.
patent: 2004/0175939 (2004-09-01), Nakamura et al.
patent: 10132448 (2003-01-01), None
patent: 0447031 (1991-09-01), None
patent: 0519608 (1992-12-01), None
patent: 1462335 (1966-12-01), None
patent: 5-283349 (1993-10-01), None
patent: 5283349 (1993-10-01), None
patent: WO0218672 (2002-03-01), None
patent: WO03029516 (2003-04-01), None
patent: WO03098667 (2003-11-01), None
Semiconductors and Semimetals, DenBaars and Kellar, vol. 50, Academic Press, Inc., 1997, p. 11-35.
Aria et al, “Highly Uniform Growth on a Low Pressure MOPVE Multiple Wafer System”, Journal of Crystal Growth 170, pp. 88-91 (1997).
Holstein, “Modeling of Chimney CVD Reactors”, Journal of Crystal Growth 125, pp. 311-319 (1992).
Lee et al. “MOCVD in Inverted Stagnation Point Flow”, Journal of Crystal Growth, pp. 120-127.
Parsons, J.D. “Inverted-Vertical OMVPE Reactor: Design and Characterization”, Journal of Crystal Growth, North-Holland Publishing Co. Amsterdam, NL. vol. 116, No. 3/4, Feb. 1, 1992, pp. 387-396, XP000265338, ISSN: 0022-0248 p. 387-p. 389, figures 1-3.
Arai, T. et al. Highly Uniform Growth in a Low-Pressure MOVPE Multiple Wafer System: Journal of Crystal Growth, North-Holland Publishing Co. Amsterdam, NL., vol. 170, No. 1-4, 1997, p. 88-91, XP004087082, ISSN: 0022-0248 p. 88-89, figure 1.
Patent Abstracts of Japan, vol. 2000, No. 04, Aug. 31, 2000 and JP 2000 031064 A, Jan. 28, 2000.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Susceptor for MOCVD reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Susceptor for MOCVD reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Susceptor for MOCVD reactor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3715232

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.