Metal working – Barrier layer or semiconductor device making
Patent
1989-12-26
1991-12-24
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
118725, 118730, 437925, C23C 1600
Patent
active
050740172
ABSTRACT:
A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.
REFERENCES:
patent: 3845738 (1974-11-01), Berkman
patent: 4499354 (1985-02-01), Hill et al.
Itoh Yukio
Ohashi Tadashi
Sasaki Yasumi
Sumiya Masayuki
Toya Eiichi
Chaudhuri Olik
Ojan Ourmazd S.
Toshiba Ceramics Co. Ltd.
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