Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-01-18
1997-09-09
Lewis, Michael
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
423445R, 117900, C01B 3100
Patent
active
056656360
ABSTRACT:
A suscepter, which is composed substantially of a vitreous carbon derived from polycarbodiimide resin; and a process for producing a suscepter, which includes molding a polycarbodiimide resin or a composition composed mainly of a polycarbodiimide resin, into a shape of a suscepter and then carbonizing the molded material in vacuum or an inert gas atmosphere.
The suscepter is free from the problems of the prior art, which has no pores on the surface and generates no impurity and which causes no cracking when used at high temperatures.
REFERENCES:
patent: 5093214 (1992-03-01), Saito et al.
Ishimatsu Takeshi
Saito Kazuo
Hendrickson Stuart L.
Lewis Michael
Nisshinbo Industries Inc.
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