Surge protective device having a surface collector region direct

Details Surge protective device having a surface collector region direct Surge protective device having a surface collector region direct

1996-08-09

1998-04-28

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257587, 257173, 257546, H01L 2362

Patent

active

057448540

ABSTRACT:
A surge protective device, which has a favorable surge-absorbing characteristic while avoiding increase in chip area and in process complexity, is disclosed. In a surge protective device having an ordinary planar bipolar transistor structure and having a voltage-regulation diode to absorb surge current by breakdown of a junction between an emitter region and base region thereof, a surface collector region thereof is shorted to the base region. Accordingly, when surge current is increased, a pn junction between a collector region and the base region is sufficiently forward biased, and thereby a backward transistor is formed. Surge current is sufficiently absorbed by the operation of the backward transistor.

REFERENCES:
patent: 4753709 (1988-06-01), Welch et al.
patent: 5268588 (1993-12-01), Marum
patent: 5528064 (1996-06-01), Thiel et al.

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