Surge protection semiconductor device

Details Surge protection semiconductor device Surge protection semiconductor device

2005-03-22

2005-03-22

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S162000, C257S546000, C257S122000, C257S107000, C257S109000, C257S126000, C257S110000, C257S120000, C257S355000, C361S091500, C361S091800, C361S118000

Reexamination Certificate

active

06870202

ABSTRACT:
A pnpn thyristor element Thy1and six pn diode elements D1,D2,D3,D4,D5,and D6are formed in a semiconductor substrate of a first conductivity type, and separated into six regions by a diffusion layer of a second conductivity type which also functions as the anode of the thyristor element Thy1. A double isolation diffusion layer is disposed between the region of the thyristor element Thy1and three pn diode elements D1·D2and D6, and the region of the three remaining pn diodes D3, D4, and D5. Surface connection is performed to provide a balance type surge protection circuit.

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