Surge protection device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

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Details

257110, 257164, 438140, H01L 2974, H01L 31111

Patent

active

059628782

ABSTRACT:
In a bidirectional surge protection device formed on a semiconductor substrate, buried layers, which have the same conduction type as and are higher in impurity concentration than the semiconductor substrate, are formed on the entire surfaces of the device regions provided on both surfaces of the semiconductor substrate or formed under emitter-push restraining layers alone, wherein injection of minority carriers from a surface opposite to the surface on which the device operates is restrained to lower a holding current. As a result, the bidirectional surge protection device easily becomes OFF once it becomes ON.

REFERENCES:
patent: 4546401 (1985-10-01), Svedberg
patent: 5148254 (1992-09-01), Matsuda et al.
patent: 5284780 (1994-02-01), Schulze et al.
Jpn. J. Appl. Phys. vol. 34 (1995) pp. 5993-5997 Part 1, No. 11, Nov. 1995.

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