Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1993-03-26
1996-01-23
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257111, 257497, 257546, H01L 2974
Patent
active
054867096
ABSTRACT:
In a breakover type surge protection device utilizing punch-through that comprises a second semiconductor region forming a first pn junction with a first semiconductor region, a third semiconductor region forming a second pn junction with the second semiconductor region and a fourth semiconductor region forming a third pn junction with the first semiconductor region at a place apart from the second semiconductor region, the second semiconductor region is constituted of a punch-through suppression region portion disposed to cover the corners of the third semiconductor region and a punch-through generation region portion disposed at a place where its thickness can be made uniform. Fabricating surge protection devices according to this configuration reduces variation among their breakover currents and hold currents and increases their surge absorption capacity.
REFERENCES:
patent: 4631561 (1986-12-01), Foroni et al.
patent: 5083185 (1992-01-01), Hayashi et al.
patent: 5274253 (1993-12-01), Ogawa
Hayashi Yutaka
Maeyashiki Yoshiki
Sato Masa-aki
Agency of Industrial Science & Technology
Bowers Courtney A.
Crane Sara W.
Ministry of International Trade & Industry
Optotechno Co., Ltd.
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