Surfacing process for the stabilization of semiconductor bodies

Details Surfacing process for the stabilization of semiconductor bodies Surfacing process for the stabilization of semiconductor bodies

1978-08-25

1980-05-13

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

357 54, 427 93, 427240, 427193, 427226, 4273762, 4274194, 4274301, H01L 21473

Patent

active

042029163

ABSTRACT:
In a surfacing process for the stabilization of semiconductor wafers in which a glass coating is provided on the surface of the semiconductor at least in the region where a pn-junction thereof extends to the surface, the glass coating is provided by directly forming on the surface of the semiconductor a layer of the oxide of the semiconductor material, applying to the semiconductor oxide layer, by melting, a base layer composed of a common glass having a thermal coefficient of expansion matched to that of the semiconductor material, and applying to the base layer a terminating layer of a glass which has a thermal coefficient of expansion lower than that of the semiconductor material, by melting such glass at a temperature in a higher temperature range adjacent that required for melting the glass of the base layer.

REFERENCES:
patent: 3212921 (1965-10-01), Pliskin et al.
patent: 3303399 (1967-02-01), Hoogendoorn et al.
patent: 3546013 (1970-12-01), Perri et al.
patent: 3632434 (1972-01-01), Hutson
patent: 3669693 (1972-06-01), Dalton et al.
patent: 3752701 (1973-08-01), Morrissey
patent: 3967310 (1976-06-01), Horiuchi et al.
patent: 4080621 (1978-03-01), Funakawa et al.
patent: 4086613 (1978-04-01), Biet et al.
Pikor "Glass Passivation of Semiconductor Devices", Technical Notes RCA, /1975.

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