Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-07-19
1998-03-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257287, 257335, 257345, 257399, 257546, 257550, 257652, H01L 2980, H01L 31112
Patent
active
057264694
ABSTRACT:
A surface voltage sustaining structure around an n.sup.+ (or p.sup.+)-type region on a p.sup.- (or n.sup.-)-type substrate for high-voltage devices is made by a combination of n-type regions and/or p-type regions and produces an effective surface density of donor (or acceptor) decreasing with the distance to the n.sup.+ (or p.sup.+)-type region on the surface, when all of the regions are depleted under reverse breakdown voltage. The surface voltage sustaining structure can make the breakdown voltage of the n.sup.+ -p.sup.- (or p.sup.+ -n.sup.-)-junction reach more than 90% of that one-sided parallel plane junction with the same substrate doping concentration. High-voltage vertical devices as well as high-voltage lateral devices with fast response, low on-voltage and high current density can be made by using this invention.
REFERENCES:
patent: 4691224 (1987-09-01), Takada
patent: 5355011 (1994-10-01), Takata
Ochi et al., "Computer Analysis of Breakdown Mechanism in Planar Power of MOSFET'S", IEEE Transactions on Electron Devices, vol. ED-27, No. 2, Feb. 1980.
Baliga et al., "High-voltage device termination of techniques, A comparative review", IEEE Proc., vol. 129, Pt. 1, No. 5, Oct. 1982.
Wildi et al., "Modeling and Process Implementation of Implanted Resurf Type Devices", IEEE 1982, pp. 268-271.
Chen et al., "Theory of Optimum Design of Reverse-Biased p-n Junctions Using Resistive Field Plates and Variation Lateral Doping", Solid State Electronics vol. 35, No. 9, pp. 1365-1370, 1992.
Mintel William
University of Elec. Sci. & Tech. of China
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