Surface treatment of III-V compound crystals

Details Surface treatment of III-V compound crystals Surface treatment of III-V compound crystals

1975-05-19

1976-11-16

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 136 89, 156612, 357 16, 357 30, 427 87, 427314, H01L 21203, H01L 3100

Patent

active

039922332

ABSTRACT:
Group III-V compound substrates are heat cleaned under vacuum conditions by heating above their congruent temperature and subjecting the substrate to at least one molecular beam of the material preferentially evaporating from the substrate thereby maintaining surface stoichiometry. Surfaces so cleaned may then have an epitaxial layer grown thereon under similiar conditions from molecular beams. Alternatively the cleaned surface may be coated with cesium and oxygen to form a photocathode.

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patent: 3672992 (1972-06-01), Schaefer
patent: 3751310 (1973-08-01), Cho
patent: 3755002 (1973-08-01), Hirai et al.
patent: 3915765 (1975-10-01), Cho et al.
Cho, A. Y., "Morphology of Epitaxial Growth of GaAs - - -Structures" J. Applied Physics, vol. 41, No. 7, June 1970, pp. 2780-2786.
Cho et al., "Molecular Beam Epitaxy of GaAs, Al.sub.x Ga.sub.1-x As and GaP" 1970 Symposium on GaAs, paper No. 2, pp. 18-29.
Chang et al., "Fabrication for Multilayer Semiconductor Devices" I.B.M. Tech. Discl. Bull., vol. 15, No. 2, July 1972, pp. 365-366.
Thurmond, C. D., "Phase Equilibria in the GaAs - - - GaP Systems" J. Phys. Chem. Solids, vol. 26, 1965, pp. 785-802.

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