Surface treatment method and surface treatment apparatus

Details Surface treatment method and surface treatment apparatus Surface treatment method and surface treatment apparatus

1994-06-29

1996-04-02

Clark, W. Robinson

Stock material or miscellaneous articles

Structurally defined web or sheet

Including variation in thickness

1566431, C03C 1502

Patent

active

055039014

ABSTRACT:
Etching selectivity is improved in a semiconductor process using a fluorocarbon gas. An energy incident to a substrate is controlled to have a value to cause transition from etching to deposition on a silicon nitride film, ions having (CF.sub.2).sub.n.sup.+ as a major component are guided onto the substrate to perform selective etching of a silicon oxide film against the silicon nitride film.

REFERENCES:
patent: 5338399 (1994-08-01), Yanagida
"Examination of Selective Etching and Etching Damage with Mass-Selected Ion Beam", Sakai et al., 1993 Dry Process Symposium, VI-4, pp. 193-198, Tokyo, 1993.
"Polymerization for Highly Selective SiO.sub.2 Plasma Etching", Samukawa, S., 1993 Dry Process Symposium, III-5, pp. 79-83, Tokyo, 1993.

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