Surface treatment for multi-layer wafers formed from layers...

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed

Reexamination Certificate

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C438S459000, C438S663000, C438S690000, C438S692000, C438S974000, C216S072000, C216S095000

Reexamination Certificate

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06991944

ABSTRACT:
This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.

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“Nitrogen Implantation in 100 Beta-SiC Layers Grown On Si Substrate”;Hirano et. al.; Journal of Applied Physics 77(3); pp. 1020-1028; 1995'.
“Quenched-In Defect Removal Through Silicide Formation By Rapid Thermal Processing”; Mathiot; Applied Physics Letters 58(2); pp. 131-133; 1991'.
D. Buttard et al., “Toward Two-Dimensional Self-Organization of Nanostructurres Using Wafer Bondig and Nanopatterned Silicon Surfaces,” IEEE Journal of Quantum Electronics, vol. 38, No. 8, pp. 1995-1005 (Aug. 2002).

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