Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-02-21
2006-02-21
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S056000, C438S694000, C438S745000, C438S767000, C438S770000
Reexamination Certificate
active
07001849
ABSTRACT:
A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2in water.
REFERENCES:
patent: 5933706 (1999-08-01), James et al.
patent: 6046068 (2000-04-01), Orava et al.
Burger Arnold
Chinn Douglas A.
James Ralph B.
Wright Gomez W.
Evans Timothy P.
Goudreau George A.
Sandia National Laboratories
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