Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Patent
1996-07-22
1998-11-24
Warden, Jill
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
134 26, 134 28, 134 29, B08B 300
Patent
active
058401270
ABSTRACT:
The concentration of Al on silicon surface is reduced to lose its influence on the growth rate of an oxide film during thermal oxidation when semiconductor surface treatment is carried out by a process for treating semiconductor surfaces which comprises a step of cleaning surfaces of semiconductors with a semiconductor surface treating agent comprising an inorganic or organic alkali, hydrogen peroxide and water as major components, and a step of rinsing the resulting surfaces with ultra-pure water, at least one of the semiconductor surface treating agent and the ultra-pure water containing as a complexing agent a compound having three or more ##STR1## groups in the molecule or a salt thereof.
REFERENCES:
patent: 4972837 (1990-11-01), Engelstad et al.
patent: 4987253 (1991-01-01), Bergeron
patent: 5011976 (1991-04-01), Watts
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5538670 (1996-07-01), Ritschkoff et al.
Hayashida Ichiro
Kakizawa Masahiko
Markoff Alexander
Wako Pure Chemical Industries Ltd.
Warden Jill
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