Surface treating agents and treating process for semiconductors

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

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134 13, 134 2, 510272, 510363, 510372, 510405, 510435, 510436, 510502, C11D 706, C11D 718, C23G 114, H01L 2102

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055808468

ABSTRACT:
The concentration of Al on silicon surface is reduced to lose its influence on the growth rate of an oxide film during thermal oxidation when semiconductor surface treatment is carried out by a process for treating semiconductor surfaces which comprises a step of cleaning surfaces of semiconductors with a semiconductor surface treating agent comprising an inorganic or organic alkali, hydrogen peroxide and water as major components, and a step of rinsing the resulting surfaces with ultra-pure water, at least one of the semiconductor surface treating agent and the ultra-pure water containing as a complexing agent a compound having three or more ##STR1## groups in the molecule or a salt thereof.

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"Cleaning Solutions Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology", Werner Kern, RCA Lab.,Princeton, NJ.; RCA Review, Jun. 1970, pp. 187-206.
IBM Technical Disclosure Bulletin, vol. 19, No. 10; Mar. 1977; K. Brack et al., "Rising Semiconductor Bodies without Depositing . . . ".

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