Surface treated low-k dielectric as diffusion barrier for...

Details Surface treated low-k dielectric as diffusion barrier for... Surface treated low-k dielectric as diffusion barrier for...

2007-09-18

2007-09-18

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S533000, C438S622000, C438S643000

Reexamination Certificate

active

10687713

ABSTRACT:
A Cu damascene structure is formed where Cu diffusion barrier is formed by treating the top surface of the surrounding low-k interlayer dielectric with nitrogen or carbon containing medium to form a silicon nitride or silicon carbide diffusion barrier rather than capping the top surface of the Cu with metal diffusion barrier as is conventionally done.

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