Surface processing method and surface processing device for sili

Details Surface processing method and surface processing device for sili Surface processing method and surface processing device for sili

1996-03-07

1999-02-09

Utech, Benjamin

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 90, 216 97, 216 99, H01L 21302, B08B 600

Patent

active

058688552

ABSTRACT:
A silicon wafer is set in a processing bath and an HF water solution and ozone water are respectively supplied from an HF line and ozone water line into the processing bath via an HF valve and ozone water valve to create a mixture. The mixture contains an HF water solution with a concentration of 0.01% to 1% and ozone water with a concentration of 0.1 ppm to 20 ppm, has substantially the same etching rate for silicon and for silicon oxide film and is used at a temperature in the range of 10.degree. to 30.degree. C. The silicon wafer and the silicon oxide film formed on part of the surface of the wafer can be simultaneously cleaned by use of the above mixture.

REFERENCES:
patent: 4171242 (1979-10-01), Liu
patent: 5261966 (1993-11-01), Mashimo et al.
patent: 5511569 (1996-04-01), Mukogawa
IBM Technical Disclosure Bulletin, "Spin-Clean Ultrasonic Jet Cleaner," vol. 34, No. 1, Jun. 1991.
T. Ohmi, T. Isagawa, T. Imaoka, and I. Sugiyama, "Ozone Decomposition in Ultrapure Water and Continuous Ozone Sterilization for a Semiconductor Ultrapure Water System," Journal of the Electrochemical Society vol. 139, No. 11, Nov. 1992.
M. Miyashita et al., "Dependence of Thin Oxide Films Quality on Surface Micro-Roughness," Department of Electronics, Tohoku University, pp. 45-46, Sendal 990, Japan.

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