Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Reexamination Certificate
2008-05-13
2008-05-13
Luu, Chuong A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
C257S678000, C257S704000, C257S684000
Reexamination Certificate
active
07372074
ABSTRACT:
An apparatus and method for a silicon-based Micro-Electro Mechanical System (MEMS) device, including a pair of silicon cover structures each having a substantially smooth and planar contact surface formed thereon; a silicon mechanism structure having a part thereof that is movably suspended relative to a relatively stationary frame portion thereof, the frame portion being formed with substantially parallel and spaced-apart smooth and planar contact surfaces; a relatively rough surface disposed between the contact surfaces of the covers and corresponding surfaces of the movable part of the mechanism structure; and wherein the contact surfaces of the cover structures form silicon fusion bond joints with the respective contact surfaces of the mechanism frame.
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patent: 5273205 (1993-12-01), Ju et al.
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patent: 5919548 (1999-07-01), Barron et al.
patent: 6629465 (2003-10-01), Maluf et al.
patent: 7005732 (2006-02-01), Horning et al.
30 pages of lecture: Micro-Technology, Technology & Applictions, Ole Hansen MIC, Aug. 19, 2002.
McNally Leonard J.
Milne James C.
Black Lowe & Graham PLLC
Honeywell International , Inc.
Luu Chuong A.
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