Surface preparation for gate oxide formation that avoids...

Details Surface preparation for gate oxide formation that avoids... Surface preparation for gate oxide formation that avoids...

2006-02-21

2010-06-01

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S756000, C257SE21219

Reexamination Certificate

active

07727900

ABSTRACT:
A cleaning sequence usable in semiconductor manufacturing efficiently cleans semiconductor substrates while preventing chemical oxide formation thereon. The sequence includes the sequence of: 1) treating with an HF solution; 2) treating with pure H2SO4; 3) treating with an H2O2solution; 4) a DI water rinse; and 5) treatment with an HCl solution. The pure H2SO4solution may include an H2SO4concentration of about ninety-eight percent (98%) or greater. After the HCl solution treatment, the cleaned surface may be a silicon surface that is free of a chemical oxide having a thickness of 5 angstroms or greater. The invention finds particular advantage in semiconductor devices that utilize multiple gate oxide thicknesses.

REFERENCES:
patent: 6032682 (2000-03-01), Verhaverbeke
patent: 6230720 (2001-05-01), Yalamanchili et al.
patent: 6232241 (2001-05-01), Yu et al.
patent: 6586293 (2003-07-01), Hasegawa
patent: 2004/0000322 (2004-01-01), Verhaverbeke
patent: 2007/0161248 (2007-07-01), Christenson et al.

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