Surface preparation for determining diffusion length by the surf

Details Surface preparation for determining diffusion length by the surf Surface preparation for determining diffusion length by the surf

1983-10-31

1985-03-26

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

29574, 156662, H01L 2166

Patent

active

045073341

ABSTRACT:
A method of treating the surface of a sample of n-type silicon material in preparation for measurements for determining the minority carrier diffusion length of the material by the surface photovoltage method comprises applying a strong oxidizing agent to an appropriately prepared surface of a semiconductor material such as silicon. The oxidizing agent is taken from the group consisting of potassium permanganate [KMnO.sub.4 ], potassium dichromate [K.sub.2 Cr.sub.2 O.sub.7 ], and ammonium dichromate [(NH.sub.4).sub.2 Cr.sub.2 O.sub.7 ]. The surface preparation assures a consistently large surface photovoltage that is stable during the surface photovoltage measurement for minority carrier diffusion length.

REFERENCES:
patent: 4333051 (1982-06-01), Goodman
A. M. Goodman, "Improvements In Method And Apparatus For Determining Minority Carrier Diffusion Length," International Electron Devices Meeting, Dec. 1980, pp. 231-234.
The American Society For Testing And Materials, "Minority Carrier Diffusion Length In Silicon By Measurement Of Steady-State Surface Photovoltage," ANSI/ASTM Standard F 391-78, pp. 770-776.
A. R. Moore et al., "Surface Treatment Of Silicon For Low Recombination Velocity," RCA Review, 17 3 (1956), pp. 5-12.
W. Kern et al., "Cleaning Solutions Based On Hydrogen Peroxide For Use In Silicon Semiconductor Technology," RCA Review, 31, 7 (1970), pp. 187-206.
A. M. Goodman, "Silicon-Wafer-Surface Damage Revealed By Surface Photovoltage Measurements," J. Appl. Phys. 53 (11), Nov. 1982, pp. 7561-7565.
A. M. Goodman et al., "Silicon-Wafer Process Evaluation Using Minority-Carrier Diffusion-Length Measurement By The SPV Method," RCA Review, 44 6 (1983), pp. 326-341.
D. G. Schimmel et al., "An Examination Of The Chemical Staining Of Silicon," J. Electrochem. Soc., vol. 125, Jan. 1978, pp. 152-155.
T. M. Buck et al., "Effects Of Certain Chemical Treatments And Ambient Atmospheres On Surface Properties Of Silicon," J. Electrochem. Soc., vol. 105, Dec. 1958, pp. 709-714.

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