Surface potential stabilizing circuit for charge-coupled devices

Details Surface potential stabilizing circuit for charge-coupled devices Surface potential stabilizing circuit for charge-coupled devices

1975-11-18

1977-03-08

Heyman, John S.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307297, 307304, 357 29, H03K 102, H03K 110, H01L 2714

Patent

active

040114716

ABSTRACT:
An integrable circuit incorporated with charge-coupled devices to stabilize the surface potential against oxide charging effects by regulating the applied gate voltage. By incorporating the circuit with charge-coupled devices, the complete integrated unit is effectively radiation hardened over an extended range of operation.

REFERENCES:
patent: 3409839 (1968-11-01), Crowe
patent: 3524999 (1970-08-01), Fletcher et al.
patent: 3806741 (1974-04-01), Smith
patent: 3823332 (1974-07-01), Feryszka et al.
Murray et al., "Radiation-resistant COS/MOS devices," RCA Engineer, Scient. Lib. 1/18/1972, pp. 40-44.
Gregor et al., "Reducing Radiation Damage in IN-CHANNEL IGFET's," IBM Tech. Discl. Bull., vol. 13, No. 11, p. 3281, 4/1971.
Newman et al., "Effect of Electron Radiation on Silicon Nitride IGFETs," IEEE Trans. on Nuclear Science, 12/1967, pp. 293-298.

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