Surface plasmon polariton actuated transistors

Details Surface plasmon polariton actuated transistors Surface plasmon polariton actuated transistors

2011-06-14

2011-06-14

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

C257S047000

Reexamination Certificate

active

07960753

ABSTRACT:
A surface plasmon polaritron activated semiconductor device uses a surface plasmon wire that functions as an optical waveguide for fast communication of a signal and functions as a energy translator using a wire tip for translating the optical signal passing through the waveguide into plasmon-polaritron energy at a connection of the semiconductor device, such as a transistor, to activate the transistor for improved speed of communications and switching for preferred use in digital systems.

REFERENCES:
patent: 4394749 (1983-07-01), Tsukada et al.
patent: 5414282 (1995-05-01), Ogura
patent: 6229189 (2001-05-01), Yap et al.
patent: 6713832 (2004-03-01), Pardo et al.
patent: 7026701 (2006-04-01), Scales et al.

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