Surface planarization

Details Surface planarization Surface planarization

2005-04-05

2005-04-05

Nguyen, George (Department: 3723)

Abrading

Abrading process

Glass or stone abrading

C451S104000, C451S291000, C451S162000, C451S290000, C451S063000

Reexamination Certificate

active

06875086

ABSTRACT:
Embodiments of methods and apparatus in accordance with the present invention provide a chemical mechanical planarization (CMP) process that provides single or multiple polishing pads to have a different rotational velocity, applied pressure and oscillation frequency on the surface of the substrate to address and compensate for the WIW (with-in-substrate) and WID (with-in-die) non-uniformities in planarization ability. The velocity of each polishing pad is adjustable providing a closer match to the substrate surface velocity over a particular zone to yield a linear velocity on the surface of the substrate.

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