Surface passivation to reduce dark current in a CMOS image...

Details Surface passivation to reduce dark current in a CMOS image... Surface passivation to reduce dark current in a CMOS image...

2005-06-21

2005-06-21

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S462000, C257S463000

Reexamination Certificate

active

06909162

ABSTRACT:
A method for reducing dark current in a photodiode is disclosed. The photodiode comprises a N-well formed in a P-substrate. The method comprises doping the surface of said N-well with a nitrogen dopant. Alternatively, an oxygen or silicon dopant may be used. Still alternatively, a silicon oxynitride layer may be formed over the N-well.

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