Surface passivation process of compound semiconductor material u

Fishing – trapping – and vermin destroying

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437946, H01L 2126

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active

054515424

ABSTRACT:
A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

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Yablonovitch, et al., Nearly Ideal Electronic Properties of Sulfide Coated GaAs Surfaces; Appl. Phys. Lett. 51(6), 10 Aug. 1987, pp. 439-441.
Tiedje, et al., Ultraviolet Photoemission Studies of GaAs (100) Surfaces Chemically Stabilized by H.sub.2 S Treatments; J. Vac. Sci. Technol. B7(4), Jul./Aug. 1989, pp. 837-840.
Wang, Surface Passivation of GaAs with P.sub.2 S.sub.5 -Containing Solutions; J. Appl. Phys. 71 (6), 15 Mar. 1992, pp. 2746-2756.
"Ultraviolet Photosulfidation of III-V Compound Semiconductors for Electronic Passivation", K. R. Zavadil, et al., American Vacuum Society--40th National Symposium--Nov. 15-19, 1993.
"Ultraviolet Photosulfidation of III-V Compound Semiconductors: A New Approach to Surface Passivation", C. I. H. Ashby, et al., Appl. Phys. Lett. 64(18), 2 May 1994, pp. 2388-2390.

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