Surface passivation of GaN devices in epitaxial growth chamber

Details Surface passivation of GaN devices in epitaxial growth chamber Surface passivation of GaN devices in epitaxial growth chamber

2006-04-04

2008-08-05

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S194000, C257SE29246, C257SE33001, C257SE33034, C257SE21403, C257SE21407

Reexamination Certificate

active

07408182

ABSTRACT:
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.

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