Surface-passivated zinc-oxide based sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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Details

C257S798000, C438S085000, C338S001000, C338S223000

Reexamination Certificate

active

07432526

ABSTRACT:
A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.

REFERENCES:
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patent: 2004/0026736 (2004-02-01), Grupp et al.
patent: 2004/0058463 (2004-03-01), Nause et al.
Koike et al. (Applied Physics Letters, 87, 112106 (2005).
The Periodic Table of the Elements, the International Union of Pure and Applied Chemistry (IUPAC), available at http://www.iupac.org/reports/periodic—table, Oct. 3, 2005.
Oliver Schmidt, Peter Kiesel, Chris G. Van de Walle, Noble M. Johnson, Jeff Nause and Gottfried H. Döhler, “Evidence for an electrically conducting layer at the native zinc oxide surface,”Jpn. J. Appl. Phys.Part 1, vol. 44, 7271-7274 (2005) (published Oct. 11, 2005).
Oliver Schmidt, Arnd Geis, Peter Kiesel, Chris G. Van de Walle, Noble M. Johnson, Andrey Bakin, Andreas Waag and Gottfried H. Döhler, “Analysis of a Conducting Channel at the Native Zinc Oxide Surface,”Superlattices and Microstructures, 39 (2006) 8-16.

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