Surface parallel modulator

Optical waveguides – Temporal optical modulation within an optical waveguide – Electro-optic

Reexamination Certificate

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Details

C385S003000, C385S030000, C385S050000

Reexamination Certificate

active

07457487

ABSTRACT:
SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGexmaterial system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Embodiments of the invention having a surface parallel configuration are especially suitable for use in fiber coupled devices. Such surface parallel devices have light propagating in the plane of the quantum wells, in a device geometry that is preferably not single-mode waveguided.

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Richard A. Soref, “Silicon-based group IV heterstructures for optoelectronic applications,” J. Vac Sci. Techno. A 14(3), May/Jun. 1996, pp. 913-918.

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