Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1994-11-04
1995-08-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
257437, 257436, 372 49, 372 99, H01L 3300
Patent
active
054442702
ABSTRACT:
A semiconductor device is provided that includes an optical cavity that is designed to provide a prescribed resonant optical wavelength. The optical cavity includes a mirror structure deposited on top of a substrate and a multi-layer region such as an electroabsorptive region, for example, deposited over the mirror structure. A partial antireflective coating is deposited over the multi-layer region. The mirror structure and the multilayer region have a thickness variation sufficient to yield a resonant optical wavelength that deviates from the prescribed resonant wavelength. The partial antireflective coating has a non-uniform thickness variation that causes the resonant optical wavelength to shift substantially toward the prescribed resonant optical wavelength.
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Cunningham John E.
Goossen Keith W.
AT&T Corp.
Mayer Stuart H.
Mintel William
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