Surface modification using low energy ground state ion beams

Details Surface modification using low energy ground state ion beams Surface modification using low energy ground state ion beams

1988-10-21

1990-02-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 437930, 437936, 437235, 437238, 250423R, 250427, 20419232, 20419234, H01L 2100, H01L 2102, H01L 3922, C23C 1500

Patent

active

049026470

ABSTRACT:
A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux and energy. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation.

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patent: 4649273 (1987-03-01), Chutjian et al.
Hart, D. M., Ion Source for Integrated Circuit and Memory Element Fabrication, IBM Tech. Dis. Bul., vol. 11, No. 10, 3/69, p. 1276.
Dworetsky, S., Electron Bombardment Ion Source for Low Energy Beams, Rev. of Scient. Instr., vol. 39, No. 11, Nov. 1968, pp. 1721-1723.
Ghandhi, S., VLSI Fabrication Principles, Chaps. 6 & 9, Wiley & Sons, 1983.
Sze, S., VLSI Technology, Chaps. 8 & 9, McGraw-Hill, 1983.
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, Chaps. 9, 14 & 16, Lattice Press, 1986.
Vossen, Jr., Thim Film Processes, Chap. II-5, Academic Press, Inc., Harcourt Brace Jovanovich, 1978.

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