Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-12-08
2000-01-18
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
156345, 216 66, 438708, H01L 2100
Patent
active
060157593
ABSTRACT:
Deposition rates of undoped silicate glass dielectric layers on thermal oxide are increased by pre-treating the thermal oxide layer with electromagnetic radiation in the ultraviolet (UV) and/or vacuum ultraviolet (VUV) wavelengths. The surface smoothness of the resulting films are also increased by pre-treating films with UV and/or VUV radiation. Furthermore, the gap filling abilities of the undoped silicate glass films are increased by pre-treating the thermal oxide with UV and/or VUV radiation. New equipment and methods are presented for exposing semiconductor devices to UV and/or VUV radiation, and for enhancing the deposition rates and film quality for semiconductor manufacture. Semiconductor devices incorporating the new methods are also described.
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Foggiato Giovanni Antonio
Khan Ashraf R.
Ramanathan Sasangan
Powell William
Quester Technology, Inc.
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