Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-11-12
1999-08-10
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257753, 257770, 438654, 438692, 438964, H01L 2348, H01L 2352
Patent
active
059363070
ABSTRACT:
A method for reducing stress in a TiN layer of a metallization structure, and a silicon wafer portion made by this method. The surface of the dielectric under the TiN is roughened using a water polish with a hard pad, to provide micromounts and valleys on the dielectric surface.
REFERENCES:
patent: 5059582 (1991-10-01), Chung
patent: 5385868 (1995-01-01), Chao et al.
patent: 5726497 (1998-03-01), Chao et al.
patent: 5773890 (1998-06-01), Uchiyama et al.
patent: 5798296 (1998-08-01), Fazan et al.
patent: 5847461 (1998-12-01), Xu et al.
Besser Paul
Gupta Subhash
Schonauer Diana M.
Singh Bhanwar
Advanced Micro Devices , Inc.
Fisher Gerald M.
Monin, Jr. Donald L.
LandOfFree
Surface modification method for film stress reduction does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface modification method for film stress reduction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface modification method for film stress reduction will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1122625