Surface magnetostatic wave device

Details Surface magnetostatic wave device Surface magnetostatic wave device

1994-09-07

1997-02-11

Kiliman, Leszek

Stock material or miscellaneous articles

Composite

Of inorganic material

428693, 428694GT, 428694ST, 428701, 428700, 428900, 252 6251R, 252 6256, 252 6257, 333134, 333147, 333148, 333150, 333156, 333193, 333201, 359280, 359282, 385 1, 385 6, 385130, G11B 566

Patent

active

056019351

ABSTRACT:
A surface magnetostatic wave device includes an Fe-containing garnet single crystal film grown on a gadolinium gallium garnet substrate. The crystallographic plane azimuth of the gadolinium gallium garnet substrate can be one of a (110) plane, a (100) plane, and a (211) plane. The device achieves both a reduced saturation magnetization and a reduced anisotropic magnetic field to thereby minimize the lowest frequency in the propagation band.

REFERENCES:
patent: 4544239 (1985-10-01), Shone et al.
patent: 4968954 (1990-11-01), Ryuo et al.
"Preparation of Ce-Substituted YIG Thick Film for Optical Isolator by Magnetron-Sputter Method", by T. Yoshino et al, Proceedings of The Sixth International Conference on Ferrites, Tokyo and Kyoto, Japan, 1992, pp. 1597-1600.

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