Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-08-02
2011-08-02
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE29072
Reexamination Certificate
active
07989799
ABSTRACT:
Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward voltage necessary for light emission. A surface light emitting element according to the present invention is a vertical cavity surface light emitting element including: an active layer5in which a quantum well layer51and a barrier layer52are alternately laminated; and reflective layers disposed both above and below the active layer5, wherein assuming that a center-to-center distance of a plurality of the quantum well layers is L, a light emission wavelength of the surface light emitting element is λ, and an average refractive index of an optical length of a resonator, being a distance between the reflective layers is n, a condition ofλ/(15×n)≦L≦λ/(10×n) is satisfied.
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International Search Report issued Jun. 19, 2007 in International (PCT) Application PCT/JP2007/056312.
Iwata Masatoshi
Sakamoto Ryo
Coleman W. David
Dowa Electronics Materials Co., Ltd.
Wenderoth , Lind & Ponack, L.L.P.
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